PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN013-100ES_2
Objective data sheet
Pin
1
2
3
mb
Type number
PSMN013-100ES I2PAK
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
Description
gate
drain
source
mounting base; connected to
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
plastic single-ended package (I2PAK); TO-262
drain-source
on-state resistance
Description
Quick reference
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
…continued
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Conditions
V
T
V
T
see
j
j
GS
GS
= 100 °C; see
= 25 °C;
Simplified outline
Figure 12
= 10 V; I
= 10 V; I
SOT226 (I2PAK)
D
D
and
= 15 A;
= 15 A;
1
Figure 11
mb
2
11
3
PSMN013-100ES
Graphic symbol
Min
-
-
Typ
-
11
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
25
13.9
Version
SOT226
D
S
Unit
mΩ
mΩ
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