PSMN016-100YS NXP Semiconductors, PSMN016-100YS Datasheet - Page 10

• Manufacturer Part Number: PSMN016-100YS
• Description: MOSFET,N CH,100V,51A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN016-100YS_3
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
50
S
40
30
20
10
0
0
All information provided in this document is subject to legal disclaimers.
T
Rev. 03 — 30 March 2010
j
0.3
= 175 °C
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
0.6
T
j
0.9
= 25 °C
V
003aad894
SD
(V)
1.2
PSMN016-100YS
© NXP B.V. 2010. All rights reserved.
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