PSMN016-100YS NXP Semiconductors, PSMN016-100YS Datasheet - Page 8

• Manufacturer Part Number: PSMN016-100YS
• Description: MOSFET,N CH,100V,51A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN016-100YS_3
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(A)
I
10
10
10
10
10
10
I
D
D
60
45
30
15
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
0
0
T
2
2
j
= 175 °C
min
typ
4
4
T
j
max
= 25 °C
V
V
All information provided in this document is subject to legal disclaimers.
GS
GS
003aad884
(V)
(V)
03aa35
Rev. 03 — 30 March 2010
6
6
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
junction temperature
factor as a function of junction temperature
-60
0
0
PSMN016-100YS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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