PSMN016-100YS NXP Semiconductors, PSMN016-100YS Datasheet - Page 4

• Manufacturer Part Number: PSMN016-100YS
• Description: MOSFET,N CH,100V,51A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN016-100YS_3
Product data sheet
Fig 3.
(A)
I
10
10
10
D
10
-1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 03 — 30 March 2010
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
10
2
t
100 μs
p
1 ms
10 ms
100 ms
= 100 μs
PSMN016-100YS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
003aad881
10
3
4 of 15