PSMN016-100YS NXP Semiconductors, PSMN016-100YS Datasheet - Page 5

• Manufacturer Part Number: PSMN016-100YS
• Description: MOSFET,N CH,100V,51A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN016-100YS_3
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
Thermal characteristics
δ = 0.5
0.1
0.05
0.02
single shot
0.2
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 03 — 30 March 2010
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Conditions
see
10
Figure 4
-3
10
-2
PSMN016-100YS
Min
-
10
P
-1
Typ
0.54
t
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aad882
δ =
Max
1.28
t
T
p
t
1
Unit
K/W
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