PSMN1R6-30PL NXP Semiconductors, PSMN1R6-30PL Datasheet - Page 9

• Manufacturer Part Number: PSMN1R6-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R6-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN1R6-30PL_2
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
40
80
V
DS
= 15 V
120
160
100
(A)
80
60
40
20
I
S
0
0
200
003aad015
Q
G
(nC)
0.2
240
Rev. 02 — 25 June 2009
0.4
175 °C
Fig 16. Input, output and reverse transfer capacitances
0.6
(pF)
10
10
10
10
C
5
4
3
2
10
as a function of drain-source voltage; typical
values
T
0.8
N-channel 30 V 1.7 mΩ logic level MOSFET
-1
j
003aad014
= 25 °C
V
SD
(V)
1
1
PSMN1R6-30PL
10
© NXP B.V. 2009. All rights reserved.
V
003aad016
DS
(V)
C
C
C
iss
rss
oss
10
2
9 of 13