PSMN3R4-30PL NXP Semiconductors, PSMN3R4-30PL Datasheet - Page 10

• Manufacturer Part Number: PSMN3R4-30PL
• Description: MOSFET,N CH,30V,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R4-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN3R4-30PL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
24 V
6 V
40
(A)
V
100
I
S
DS
80
60
40
20
60
0
= 15 V
0
All information provided in this document is subject to legal disclaimers.
Q
003aad417
G
(nC)
Rev. 01 — 2 November 2010
80
0.3
T
j
= 175 °C
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
0.9
4
3
2
T
10
as a function of drain-source voltage; typical
values
j
N-channel 30 V 3.4 mΩ logic level MOSFET
= 25 °C
-1
003aad416
V
SD
(V)
1.2
1
PSMN3R4-30PL
10
© NXP B.V. 2010. All rights reserved.
V
003aad418
DS
(V)
C
C
C
oss
iss
rss
10
2
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