PSMN3R8-30LL NXP Semiconductors, PSMN3R8-30LL Datasheet - Page 5

• Manufacturer Part Number: PSMN3R8-30LL
• Description: MOSFET,N CH,30V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R8-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN3R8-30LL
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
(A)
I
D
th(j-a)
10
10
10
10
10
10
10
10
−1
−2
−1
−2
1
3
2
1
10
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
−1
−6
Thermal characteristics
single shot
0.1
0.05
δ = 0.5
0.02
0.2
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Limit R
DSon
10
th(j-a)
−5
= V
DS
will be determined by the customer’s PCB characteristics
/ I
D
All information provided in this document is subject to legal disclaimers.
10
1
−4
Rev. 3 — 18 August 2010
10
N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET
DC
−3
Conditions
see
Figure 4
10
10
−2
[1]
PSMN3R8-30LL
Min
-
-
V
10
P
DS
−1
10 ms
100 ms
t
1 ms
100 μs
p
(V)
= 10 μs
t
Typ
1
53
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003a a e 271
003aae141
δ =
Max
1.3
60
t
T
p
t
10
1
2
Unit
K/W
K/W
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