BUL58D STMicroelectronics, BUL58D Datasheet - Page 2

• Manufacturer Part Number: BUL58D
• Description: TRANSISTOR, NPN, TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL58D

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 450V
• Power Dissipation Pd: 85W
• Dc Collector Current: 5A
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Collector Emitter: RoHS Compliant
• Dc Current Gain Hfe: 38
• Rohs Compliant: Yes

BUL58D
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
Safe Operating Areas
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
V
Symbol
R
R
CEO(sus)
CE(sat)
BE(sat)
V
thj-case
h
I
thj-amb
I
CEO
CES
EBO
FE
V
t
t
t
t
s
s
f
f
f
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Diode Forward Voltage I
C
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
V
V
I
V
V
T
C
E
C
C
C
C
C
C
C
C
C
j
CE
CEO
CE
BE(off)
CL
BE(off)
CL
= 10 mA
= 125
= 100 mA L = 25 mH
= 4 A
= 5 A
= 4 A
= 5 A
= 5 A
= 500 mA
= 2 A
= 2 A
= 3 A
= 250 V
= 250 V
= 800 V
= 450 V
case
= 800 V
= -5 V
= -5 V
o
= 25
C
Test Conditions
I
I
I
I
V
B
B
B
B
CE
= 0.8 A
= 1 A
= 0.8 A
= 1 A
o
= 5 V
V
C unless otherwise specified)
R
R
L = 200 H
L = 200 H
CE
I
I
B1
B1
BB
BB
= 5 V
Derating Curve
= 0.4 A
= 0.4 A
= 0
= 0
T
j
= 125
o
Max
Max
C
Min.
450
9
5
Typ.
1.47
62.5
180
1.5
38
90
1
Max.
200
500
200
180
1.5
1.3
1.5
1.8
2
3
o
o
Unit
C/W
C/W
ns
ns
V
V
V
V
V
V
V
A
A
A
s
s