6MBI75S-120-50 FUJI ELECTRIC, 6MBI75S-120-50 Datasheet - Page 10

• Manufacturer Part Number: 6MBI75S-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 520W
• Rohs Compliant: Yes

20000
10000
1000
200
150
100
200
150
100
100
50
50
0
0
Capacitance vs. Collector- Emitter voltage (typ.)
0
0
0
Collector current vs. Collector- Emitter voltage
Collector current vs. Collector- Emitter voltage
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
5
1
1
VGE=0V, f= 1MHz, Tj= 25℃
10
Tj= 25℃
VGE=15V (typ.)
2
2
15
VGE= 20V
20
Tj= 25℃
(typ.)
3
3
15V
25
12V
Tj= 125℃
4
4
30
Cies
Coes
Cres
10V
8V
35
5
5
1000
200
150
100
800
600
400
200
50
10
0
8
6
4
2
0
0
Collector- Emitter voltage vs. Gate- Emitter voltage
0
5
0
Collector current vs. Collector- Emitter voltage
Collector - Emitter voltage : VCE [ V ]
MS5F 6104
Gate - Emitter voltage : VGE [ V ]
1
200
10
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25℃
Gate charge : Qg [ nC ]
Tj= 125℃
Tj= 25℃
2
400
15
(typ.)
(typ.)
3
VGE= 20V
600
20
Ic= 150A
Ic= 75A
Ic= 37.5A
4
15V
H04- 004- 03a
10
12V
10V
14
8V
800
25
5
25
20
15
10
5
0
a