6MBI75S-120-50 FUJI ELECTRIC, 6MBI75S-120-50 Datasheet - Page 6

• Manufacturer Part Number: 6MBI75S-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 520W
• Rohs Compliant: Yes

11. List of material (材料リスト)
12. RoHS Directive Compliance (RoHS 指令適用について)
本IGBTモジュールは富士電機デバイステクノロジーが発行しているRoHSに関する資料MS5F6209を適用する。
日本語版(MS5F6212)は参考資料とする。
Module. The Japanese Edition(MS5F6212) is made into a reference grade.
The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT
No.
10 Solder
11
12 Label
13 FWD chip
14 Ring
1 Base Plate
2 Terminal
3 Cover
4 Case
5 Isolation substrate
6 IGBT chip
7 Wiring
8 Silicone Gel
9 Adhesive
Solder
(Under Isolation substrate )
(Under chip)
Parts
Material (main)
Silicone resin
Silicone resin
Sn/Ag base
Sn/Ag base
Al
PPS resin
PPS resin
Aluminum
2
Silicon
Silicon
Paper
O
Cu
Cu
Fe
3
(Total weight of soldering material(typ):
+ Cu
Ni plating
Ni plating (Internal)
Lead free solder plating (External)
UL 94V-0
UL 94V-0
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
Trivalent Chromate treatment
a
MS5F 6104
Ref.
8.8 g)
H04- 004- 03a
a
6
14
a