6MBI75S-120-50 FUJI ELECTRIC, 6MBI75S-120-50 Datasheet - Page 11

• Manufacturer Part Number: 6MBI75S-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 520W
• Rohs Compliant: Yes

1000
5000
1000
500
100
500
100
50
50
50
40
30
20
10
0
0
5
5
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=600V, VGE=± 15V, Rg= 16Ω , Tj= 25℃
Vcc=600V, Ic=75A, VGE=± 15V, Tj= 125℃
Vcc=600V, Ic=75A, VGE=± 15V, Tj= 25℃
10
10
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Gate resistance : Rg [ Ω ]
50
50
50
100
100
100
tr
tf
tf
ton
ton
tr
Eon
Eoff
Err
toff
toff
150
500
500
1000
500
100
200
150
100
50
20
15
10
50
5
0
0
0
0
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
toff
ton
tr
tf
Vcc=600V, VGE=± 15V, Rg= 16Ω , Tj= 125℃
200
Collector - Emitter voltage : VCE [ V ]
MS5F 6104
+VGE=15V, - VGE≦ 15V, Rg≧ 16Ω , Tj≦ 125℃
Vcc=600V, VGE=± 15V, Rg=16Ω
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Reverse bias safe operating area
400
50
50
600
800
100
100
1000
Eon(125℃ )
Err(125℃ )
Eon(25℃ )
Eoff(125℃ )
Eoff(25℃ )
Err(25℃ )
1200
H04- 004- 03a
11
14
1400
150
150
a