7MBR10SA-120-50 FUJI ELECTRIC, 7MBR10SA-120-50 Datasheet - Page 2

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7MBR10SA-120-50

Manufacturer Part Number
7MBR10SA-120-50
Description
IGBT, 7 PACK MOD, 1200V, 10A, M711
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 7MBR10SA-120-50

Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
10A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Max
75W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
7MBR10SA-120-50
Quantity:
200
IGBT Modules
Item
Item
Thermal resistance ( 1 device )
Contact thermal resistance
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Thermal resistance Characteristics
Electrical characteristics (Tj=25°C unless otherwise specified)
Equivalent Circuit Schematic
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
1(R)
2(S)
[Converter]
3(T)
*
21(P)
23(N)
2 2 (P 1 )
7 (B )
1 4 (G b)
I
I
V
V
C
t
t
t
t
t
V
t
I
I
V
t
t
t
t
I
V
I
R
B
2 4 (N 1 )
Symbol
Symbol
Rth(j-c)
Rth(c-f)
CES
GES
on
r
r(i)
off
f
rr
CES
GES
on
r
off
f
RRM
RRM
GE(th)
CE(sat)
CE(sat)
FM
ies
F
[B ra k e ]
2 0 (G u)
1 9 (E u )
1 3 (G x)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
V
V
V
V
V
V
I
V
R
I
I
V
V
I
V
I
V
R
V
I
V
T=25°C
T=100°C
T=25/50°C
Condition
Condition
C
F
F
C
C
F
CE
CE
CE
GE
GE
CC
GE
G
CES
CE
CC
GE
G
R
R
=10A
=10A
=10A
=10A
=10A, V
=10A
=1200V
=1600V
=120
=120
=1200V, V
=0V, V
=20V, I
=15V, Ic=10A chip
=0V, V
=600V
=±15V
=0V, V
=600V
=±15V
=1200V, V
4 (U )
GE
GE
CE
GE
C
1 8 (G v)
1 2 (G y)
=10mA
1 7 (E v )
=15V chip
=10V, f=1MHz
=±20V
=±20V
GE
GE
=0V
[In v er ter ]
=0V
terminal
chip
terminal
terminal
chip
terminal
5 (V )
1 6 (G w )
1 1 (G z)
1 5 (E w )
Min.
Min.
3305
465
5.5
Characteristics
Characteristics
6 (W )
1 0 (E n )
Typ.
1200
3375
Typ.
5000
495
7MBR10SA120
7.2
2.1
2.15
0.35
0.25
0.1
0.45
0.08
2.3
2.35
2.1
2.2
0.35
0.25
0.45
0.08
1.1
1.2
0.05
8
[T h e rm is to r]
Max.
Max.
3450
520
1.67
2.78
1.85
1.67
1.0
0.2
8.5
2.6
1.2
0.6
1.0
0.3
3.2
0.35
1.0
0.2
2.6
1.2
0.6
1.0
0.3
1.0
1.5
1.0
9
Unit
Unit
°C/W
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
K

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