7MBR10SA-120-50 FUJI ELECTRIC, 7MBR10SA-120-50 Datasheet - Page 3

• Manufacturer Part Number: 7MBR10SA-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 10A, M711
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR10SA-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 75W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Modules
Characteristics (Representative)
5000
1000
500
100
25
20
15
10
25
20
15
10
50
5
0
5
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
5
Collector current vs. Collector-Emitter voltage
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25
10
VGE=15V (typ.)
Tj= 25
2
2
15
[ Inverter ]
[ Inverter ]
[ Inverter ]
VGE= 20V
o
C (typ.)
Tj= 25
20
3
3
15V
o
C
12V
o
25
C
Tj= 125
4
4
o
30
C
Cies
Coes
Cres
10V
8V
35
5
5
1000
800
600
400
200
25
20
15
10
10
5
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
20
1
Collector - Emitter voltage : VCE [ V ]
10
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=10A, Tj= 25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125
Tj= 25
40
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
o
15
o
C (typ.)
C (typ.)
60
3
VGE= 20V
7MBR10SA120
o
C
20
15V
Ic= 10A
Ic= 20A
Ic= 5A
80
4
12V
10V
8V
100
25
5
25
20
15
10
5
0