7MBR10SA-120-50 FUJI ELECTRIC, 7MBR10SA-120-50 Datasheet - Page 4

• Manufacturer Part Number: 7MBR10SA-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 10A, M711
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR10SA-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 75W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Modules
1000
5000
1000
500
100
500
100
50
50
8
6
4
2
0
50
50
0
toff
ton
tr
tf
Vcc=600V, V
Vcc=600V, Ic=10A, V
Vcc=600V, Ic=10A, V
100
100
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
5
Gate resistance : Rg [
Gate resistance : Rg [
Collector current : Ic [ A ]
GE
=±15V, Rg=120 , Tj=25°C
[ Inverter ]
[ Inverter ]
[ Inverter ]
GE
GE
10
=±15V, Tj=25°C
=±15V, Tj=125°C
500
500
]
]
15
1000
1000
ton
toff
tr
Eon
Eoff
tf
Err
2000
2000
20
1000
500
100
50
25
20
15
10
3
2
1
0
5
0
0
0
0
toff
ton
tr
tf
200
+V
Vcc=600V, V
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
GE
Reverse bias safe operating area
=15V, -V
Vcc=600V, V
Collector - Emitter voltage : VCE [ V ]
5
5
400
Collector current : Ic [ A ]
Collector current : Ic [ A ]
GE
GE
[ Inverter ]
=±15V, Rg=120 , Tj=125°C
=
<15V, Rg>120 , Tj<125°C
600
GE
[ Inverter ]
[ Inverter ]
=±15V, Rg=120
10
10
=
800
7MBR10SA120
=
1000
15
15
Eoff(25
Eon(25
Eon(125
Eoff(125
Err(125
Err(25
1200
o
C)
o
o
C)
o
C)
C)
o
o
C)
C)
1400
20
20