BUK653R4-40C NXP Semiconductors, BUK653R4-40C Datasheet - Page 9

• Manufacturer Part Number: BUK653R4-40C
• Description: MOSFET,N CH,40V,100A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK653R4-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3050µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-78A
• Rohs Compliant: Yes

NXP Semiconductors
BUK653R4-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
All information provided in this document is subject to legal disclaimers.
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003aae337
C
C
C
(V)
oss
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iss
10
Rev. 02 — 12 October 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
I
GS
S
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
T
V
0
0
j
GS
= 25 °C; I
= 0 V
14 V
0.3
T j = 175 °C
D
50
= 25 A
BUK653R4-40C
0.6
100
0.9
V
T j = 25 °C
Q
DS
© NXP B.V. 2010. All rights reserved.
V
G
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003aae339
SD
= 32 V
(nC)
(V)
150
1.2
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