BUK662R4-40C NXP Semiconductors, BUK662R4-40C Datasheet - Page 7

• Manufacturer Part Number: BUK662R4-40C
• Description: MOSFET,N CH,40V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK662R4-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1900µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK662R4-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
200
160
120
(S)
g
80
40
fs
(A)
0
250
200
150
100
I
D
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
50
0
0
Characteristics
0
Parameter
source-drain voltage
reverse recovery time
recovered charge
10.0
10
0.5
5.0
…continued
4.5
20
1
30
V
GS
1.5
Conditions
I
see
I
V
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S
S
DS
003aae582
(V) = 4.0
= 25 A; V
= 20 A; dI
I
D
003aae701
V
Figure 16
= 25 V
(A)
DS
(V)
3.8
3.6
3.4
3.2
Rev. 2 — 2 November 2010
40
2
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
250
200
150
100
I
D
50
10
8
6
4
2
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
5
T
j
= 175 °C
2
BUK662R4-40C
Min
-
-
-
N-channel TrenchMOS FET
10
T
j
4
Typ
0.8
60
104
= 25 °C
15
© NXP B.V. 2010. All rights reserved.
V
GS
V
003aae703
003aae597
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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