BUK664R6-40C NXP Semiconductors, BUK664R6-40C Datasheet - Page 9

• Manufacturer Part Number: BUK664R6-40C
• Description: MOSFET,N CH,40V,80A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK664R6-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
BUK664R6-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
I
1
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae321
(V)
C
C
C
iss
oss
rss
Rev. 2 — 17 November 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
(V)
I
S
GS
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
0.3
14 V
25
T
j
= 175 °C
BUK664R6-40C
0.6
50
T
0.9
75
V
j
© NXP B.V. 2010. All rights reserved.
DS
= 25 °C
Q
003aae324
003aae325
V
= 32 V
G
SD
(nC)
(V)
100
1.2
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