SQD50P04-13L-GE3 Vishay, SQD50P04-13L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD50P04-13L-GE3
• Description: MOSFET,P CH,W DIODE,40V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50P04-13L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 83W
• Rohs Compliant: Yes

SQD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
0.01
- 0.1
- 0.4
100
0.1
1.1
0.8
0.5
0.2
10
1
- 50 - 25
0
Source Drain Diode Forward Voltage
0.2
T
J
= 150 °C
V
0
SD
- - Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
25
J
- Temperature (°C)
50
0.6
75
I
D
T
100
J
0.8
= 250 µA
- 40
- 42
- 44
- 46
- 48
- 50
Drain Source Breakdown vs. Junction Temperature
= 25 °C
A
- 50
= 25 °C, unless otherwise noted)
I
D
125
= 5 mA
1.0
- 25
150
0
T
1.2
175
J
- Junction Temperature (°C)
25
I
D
= 10 mA
50
75
100
0.10
0.08
0.06
0.04
0.02
0.00
125
60
48
36
24
12
0
0
0
150
On-Resistance vs. Gate-to Source Voltage
T
C
= 25 °C
175
10
2
V
T
GS
C
= - 55 °C
- Gate-to-Source Voltage (V)
Transconductance
I
D
- Drain Current (A)
T
20
J
4
= 25 °C
T
S10-1848-Rev. B, 06-Sep-10
C
Document Number: 65157
= 125 °C
30
6
T
J
= 150 °C
40
8
10
50