SQD50P04-13L-GE3 Vishay, SQD50P04-13L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD50P04-13L-GE3
• Description: MOSFET,P CH,W DIODE,40V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50P04-13L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 83W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 65157
S10-1848-Rev. B, 06-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
A
100
0.1
10
10
= 25 °C, unless otherwise noted)
1
0.01
-2
Limited by R
Single Pulse
T
C
* V
= 25 °C
GS
> minimum V
V
0.1
Square Wave Pulse Duration (s)
DS
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
I
DM
-1
*
Limited
GS
I
at which R
D
1
Limited
BVDSS Limited
DS(on)
1
10
is specified
1 ms
10 ms
100 µs
100 ms
1 s, 10 s, DC
100
10
SQD50P04-13L
Vishay Siliconix
100
www.vishay.com
1000
5