SI9433BDY-T1-GE3 Vishay, SI9433BDY-T1-GE3 Datasheet

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SI9433BDY-T1-GE3

Manufacturer Part Number
SI9433BDY-T1-GE3
Description
P-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI9433BDY-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 6.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
12V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI9433BDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
ADI
Quantity:
200
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72755
S09-0870-Rev. B, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
G
S
S
S
1
2
3
4
Si9433BDY -T1-E3
Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.040 at V
0.060 at V
SO-8
R
DS(on)
J
a
= 150 °C)
a
GS
GS
8
7
6
5
= - 4.5 V
= - 2.7 V
(Ω)
(Lead (Pb)-free)
P-Channel 20-V (D-S) MOSFET
D
D
D
D
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 6.2
- 5.0
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
Typical
10 s
- 6.2
- 5.0
- 2.3
2.5
1.6
45
80
20
G
P-Channel MOSFET
- 55 to 150
± 12
- 20
- 20
Steady State
S
D
Maximum
- 4.5
- 3.5
- 1.2
1.3
0.8
50
95
24
Vishay Siliconix
Si9433BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI9433BDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si9433BDY -T1-E3 (Lead (Pb)-free) Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si9433BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72755 S09-0870-Rev. B, 18-May- 4 °C J 0.8 1.0 1.2 Si9433BDY Vishay Siliconix 1500 1200 C iss 900 600 C 300 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 ...

Page 4

... Si9433BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 Limited DS(on D(on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72755. Document Number: 72755 S09-0870-Rev. B, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si9433BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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