SI9433BDY-E3 VISHAY [Vishay Siliconix], SI9433BDY-E3 Datasheet

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SI9433BDY-E3

Manufacturer Part Number

SI9433BDY-E3

Description

P-Channel 20-V (D-S) MOSFET

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.SI9433BDY-E3.pdf (5 pages)

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Notes

a.

Document Number: 72755

S-40242—Rev. A, 16-Feb-04

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Ordering Information: Si9433BDY—E3 (Lead Free)

V

Surface Mounted on FR4 Board, t v 10 sec.

i

DS

−20

20

(V)

J

ti

t A bi

G

S

S

S

Si9433BDY-T1—E3 (Lead Free with Tape and Reel)

1

2

3

4

J

J

a

a

0.040 @ V

0.060 @ V

= 150_C)

= 150_C)

t

a

a

r

Parameter

Top View

Parameter

DS(on)

SO-8

GS

GS

a

a

(W)

= −4.5 V

= −2.7 V

P-Channel 20-V (D-S) MOSFET

a

8

7

6

5

D

D

D

D

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

t v 10 sec

T

T

T

T

New Product

I

A

A

A

A

D

−6.2

−5.0

= 25_C

= 70_C

= 25_C

= 70_C

(A)

Symbol

Symbol

T

R

R

R

J

V

V

I

P

P

, T

DM

thJA

thJF

I

I

I

GS

DS

D

D

S

D

D

stg

G

P-Channel MOSFET

10 secs

Typical

−6.2

−5.0

−2.3

S

D

2.5

1.6

45

80

20

−55 to 150

"12

−20

−20

Steady State

Maximum

Vishay Siliconix

−4.5

−3.5

−1.2

1.3

0.8

50

95

24

Si9433BDY

www.vishay.com

Unit

Unit

_C/W

_C

C/W

W

W

V

V

A

A

1

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