SI9433BDY-E3 VISHAY [Vishay Siliconix], SI9433BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9433BDY-E3
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72755
S-40242—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
0.1
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 6.2 A
V
0.2
On-Resistance vs. Drain Current
= 6 V
2
GS
4
T
V
= 2.7 V
J
SD
Q
= 150_C
g
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
4
− Drain Current (A)
Gate Charge
8
0.6
6
12
0.8
8
V
T
GS
J
= 25_C
= 4.5 V
16
1.0
10
1.2
20
12
New Product
1500
1200
0.15
0.12
0.09
0.06
0.03
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
C
GS
= 6.2 A
rss
= 4.5 V
2
4
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
4
8
Vishay Siliconix
C
50
C
oss
iss
I
Si9433BDY
12
6
D
75
= 6.2 A
100
16
www.vishay.com
8
125
150
10
20
3