SI9433BDY-T1-E3/BKN Siliconix / Vishay, SI9433BDY-T1-E3/BKN Datasheet

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SI9433BDY-T1-E3/BKN

Manufacturer Part Number
SI9433BDY-T1-E3/BKN
Description
P-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI9433BDY-T1-E3/BKN

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72755
S09-0870-Rev. B, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
G
S
S
S
1
2
3
4
Si9433BDY -T1-E3
Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.040 at V
0.060 at V
SO-8
R
DS(on)
J
a
= 150 °C)
a
GS
GS
8
7
6
5
= - 4.5 V
= - 2.7 V
(Ω)
(Lead (Pb)-free)
P-Channel 20-V (D-S) MOSFET
D
D
D
D
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 6.2
- 5.0
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
Typical
10 s
- 6.2
- 5.0
- 2.3
2.5
1.6
45
80
20
G
P-Channel MOSFET
- 55 to 150
± 12
- 20
- 20
Steady State
S
D
Maximum
- 4.5
- 3.5
- 1.2
1.3
0.8
50
95
24
Vishay Siliconix
Si9433BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI9433BDY-T1-E3/BKN Summary of contents

Page 1

... Top View Ordering Information: Si9433BDY -T1-E3 (Lead (Pb)-free) Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si9433BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72755 S09-0870-Rev. B, 18-May- 4 °C J 0.8 1.0 1.2 Si9433BDY Vishay Siliconix 1500 1200 C iss 900 600 C 300 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 ...

Page 4

... Si9433BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 Limited DS(on D(on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72755. Document Number: 72755 S09-0870-Rev. B, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si9433BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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