SI9433BDY-T1 Vishay/Siliconix, SI9433BDY-T1 Datasheet

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SI9433BDY-T1

Manufacturer Part Number
SI9433BDY-T1
Description
MOSFET 20V 6.2A 2.3W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI9433BDY-T1

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
40 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
55 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.3 W
Rise Time
55 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
65 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9433BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 881
Part Number:
SI9433BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI9433BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
ADI
Quantity:
200
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72755
S09-0870-Rev. B, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
G
S
S
S
1
2
3
4
Si9433BDY -T1-E3
Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.040 at V
0.060 at V
SO-8
R
DS(on)
J
a
= 150 °C)
a
GS
GS
8
7
6
5
= - 4.5 V
= - 2.7 V
(Ω)
(Lead (Pb)-free)
P-Channel 20-V (D-S) MOSFET
D
D
D
D
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 6.2
- 5.0
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
Typical
10 s
- 6.2
- 5.0
- 2.3
2.5
1.6
45
80
20
G
P-Channel MOSFET
- 55 to 150
± 12
- 20
- 20
Steady State
S
D
Maximum
- 4.5
- 3.5
- 1.2
1.3
0.8
50
95
24
Vishay Siliconix
Si9433BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI9433BDY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si9433BDY -T1-E3 (Lead (Pb)-free) Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si9433BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72755 S09-0870-Rev. B, 18-May- 4 °C J 0.8 1.0 1.2 Si9433BDY Vishay Siliconix 1500 1200 C iss 900 600 C 300 oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si9433BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 Limited DS(on D(on) Limited °C A 0.1 Single Pulse BVDSS Limited 0 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72755. Document Number: 72755 S09-0870-Rev. B, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si9433BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 7

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 8

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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