SI9433BDY-T1 Vishay/Siliconix, SI9433BDY-T1 Datasheet - Page 8
SI9433BDY-T1
Manufacturer Part Number
SI9433BDY-T1
Description
MOSFET 20V 6.2A 2.3W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI9433BDY-T1.pdf
(9 pages)
Specifications of SI9433BDY-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
40 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
55 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.3 W
Rise Time
55 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
65 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI9433BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 881
Part Number:
SI9433BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
ADI
Quantity:
200
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08