SI9433BDY-T1 Vishay/Siliconix, SI9433BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI9433BDY-T1
• Description: MOSFET 20V 6.2A 2.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI9433BDY-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 55 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 55 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72755
S09-0870-Rev. B, 18-May-09
0.15
0.12
0.09
0.06
0.03
0.00
0.1
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 6.2 A
V
0.2
On-Resistance vs. Drain Current
= 6 V
2
GS
4
T
V
= 2.7 V
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
4
I
D
Gate Charge
- Drain Current (A)
8
0.6
6
12
0.8
8
T
V
J
GS
= 25 °C
= 4.5 V
16
10
1.0
20
12
1.2
1500
1200
0.15
0.12
0.09
0.06
0.03
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
rss
= 6.2 A
= 4.5 V
4
2
V
V
DS
0
T
GS
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
8
4
C
50
C
Vishay Siliconix
oss
iss
Si9433BDY
12
I
D
6
75
= 6.2 A
www.vishay.com
100
16
8
125
150
20
10
3