SUM110N04-04-E3 Vishay, SUM110N04-04-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-04-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,110A I(D),TO-263AB
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-04-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUM110N04-04-E3; SUM110N04-04-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72077
S-80108-Rev. E, 21-Jan-08
10000
8000
6000
4000
2000
250
200
150
100
50
250
200
150
100
0
50
0
0
0
0
0
C
rss
V
15
GS
2
V
8
V
DS
DS
= 10 thru 7 V
Output Characteristics
- Drain-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
Transconductance
oss
I
D
30
Capacitance
- Drain Current (A)
4
16
C
45
iss
4 V
6
24
T
60
C
= - 55 °C
6 V
5 V
8
32
75
125 °C
25 °C
10
40
90
0.005
0.004
0.003
0.002
0.001
0.000
250
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 85 A
1
On-Resistance vs. Drain Current
20
= 30 V
V
50
GS
Transfer Characteristics
Q
2
g
- Gate-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
40
- Drain Current (A)
Gate Charge
V
100
SUM110N04-04
GS
3
T
25 °C
= 10 V
C
60
Vishay Siliconix
= 125 °C
4
150
80
5
www.vishay.com
200
100
- 55 °C
6
120
250
7
3