SUM110N04-04-E3 Vishay, SUM110N04-04-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N04-04-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,110A I(D),TO-263AB
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-04-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUM110N04-04-E3; SUM110N04-04-E3TR

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72077
S-80108-Rev. E, 21-Jan-08
0.01
0.1
120
100
2
1
10 -
80
60
40
20
0
4
0
0.2
0.1
Duty Cycle = 0.5
http://www.vishay.com/ppg?72077.
Single Pulse
Maximum Avalanche and Drain Current
25
0.02
T
C
0.05
vs. Case Temperature
50
- Ambient Temperature (°C)
10 -
75
3
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
Square Wave Pulse Duration (s)
10 -
175
2
10 -
1000
100
1
0.1
10
1
0.1
* V
GS
V
minimum V
DS
Single Pulse
- Drain-to-Source Voltage (V)
T
Safe Operating Area
C
1
= 25 °C
by r
Limited
1
GS
SUM110N04-04
DS(on) *
at which r
Vishay Siliconix
DS(on)
10
www.vishay.com
is specified
10
10 µs
100 µs
1 ms
10 ms
100 ms
DC
100
5