SEP8505-002 Honeywell, SEP8505-002 Datasheet - Page 2

• Manufacturer Part Number: SEP8505-002
• Description: Infrared Emitters GaAs Emitting Diode T-1 Package
• Manufacturer: Honeywell

Specifications of SEP8505-002

• Bandwidth: 50 nm
• Current, Forward: 20 mA
• Package Type: T-1
• Power Dissipation: 70 mW
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Fall: 0.7 us
• Time, Rise: 0.7 us
• Voltage, Forward: 1.5 V
• Voltage, Reverse: 3 V (Break Down)
• Wave Length: 935 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (5 sec)
Notes
0.18 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8505
GaAs Infrared Emitting Diode
1. Derate linearly from 25¡C free-air temperature at the rate of
PARAMETER
SYMBOL
50 mA
70 mW [À]
-40¡C to 85¡C
-40¡C to 85¡C
240¡C
MIN
TYP
MAX
UNITS
SCHEMATIC
TEST CONDITIONS
37