SEP8505-002 Honeywell, SEP8505-002 Datasheet - Page 3

• Manufacturer Part Number: SEP8505-002
• Description: Infrared Emitters GaAs Emitting Diode T-1 Package
• Manufacturer: Honeywell

Specifications of SEP8505-002

• Bandwidth: 50 nm
• Current, Forward: 20 mA
• Package Type: T-1
• Power Dissipation: 70 mW
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Fall: 0.7 us
• Time, Rise: 0.7 us
• Voltage, Forward: 1.5 V
• Voltage, Reverse: 3 V (Break Down)
• Wave Length: 935 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1
Fig. 3
Fig. 5
SEP8505
GaAs Infrared Emitting Diode
38
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
870
-40
0
-30
890
Angular displacement - degrees
-20
Forward current - mA
910
Wavelength - nm
20
-10
930
0
950
+10 +20 +30 +40
40
970
990 1010
gra_027.ds4
gra_003.ds4
gra_005.ds4
60
Fig. 2
Fig. 4
Fig. 6
10.0
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
5.0
2.0
1.0
0.5
0.2
0.1
0.7
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8405
7
4
2
1
10
-40
0.01
Lens-to-lens separation - inches
0.02 0.04
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
0.1
I
T
V
F
A
30
35
CE
= 25 mA
= 25 °C
0.2
= 5 V
40 50
60
0.4 0.7 1
gra_028.ds4
gra_207.ds4
gra_029.ds4
100
85