SEP8505-002 Honeywell, SEP8505-002 Datasheet - Page 4

• Manufacturer Part Number: SEP8505-002
• Description: Infrared Emitters GaAs Emitting Diode T-1 Package
• Manufacturer: Honeywell

Specifications of SEP8505-002

• Bandwidth: 50 nm
• Current, Forward: 20 mA
• Package Type: T-1
• Power Dissipation: 70 mW
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Fall: 0.7 us
• Time, Rise: 0.7 us
• Voltage, Forward: 1.5 V
• Voltage, Reverse: 3 V (Break Down)
• Wave Length: 935 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8505
GaAs Infrared Emitting Diode
5.0
2.0
1.0
0.5
0.2
0.1
10
Relative Power Output vs
Free Air Temperature
-50
T
-25
A
- Free-air temperature - (°C)
0
+25
I
F
= 40 mA
I
I
+50
F
F
= 10 mA
= 30 mA
I
F
= 20 mA
+75
gra_130.ds4
+100
39