SEP8505-002 Honeywell, SEP8505-002 Datasheet - Page 4
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SEP8505-002
Manufacturer Part Number
SEP8505-002
Description
Infrared Emitters GaAs Emitting Diode T-1 Package
Manufacturer
Honeywell
Datasheet
1.SEP8505-002.pdf
(4 pages)
Specifications of SEP8505-002
Bandwidth
50 nm
Current, Forward
20 mA
Package Type
T-1
Power Dissipation
70 mW
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-55 °C
Time, Fall
0.7 us
Time, Rise
0.7 us
Voltage, Forward
1.5 V
Voltage, Reverse
3 V (Break Down)
Wave Length
935 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SEP8505-002
Manufacturer:
HoneyweLL
Quantity:
50 000
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SEP8505
GaAs Infrared Emitting Diode
5.0
2.0
1.0
0.5
0.2
0.1
10
Relative Power Output vs
Free Air Temperature
-50
T
-25
A
- Free-air temperature - (°C)
0
+25
I
F
= 40 mA
I
I
+50
F
F
= 10 mA
= 30 mA
I
F
= 20 mA
+75
gra_130.ds4
+100
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