HSDL-3602-008 Avago Technologies US Inc., HSDL-3602-008 Datasheet - Page 4

• Manufacturer Part Number: HSDL-3602-008
• Description: Infrared Transceivers 1m 3V FIR 400units t op options
• Manufacturer: Avago Technologies US Inc.

Specifications of HSDL-3602-008

• Wavelength: 875 nm, 880 nm
• Continual Data Transmission: 4 Mbit/s
• Transmission Distance: 1.5 m
• Radiant Intensity: 250 mW/sr
• Half Intensity Angle Degrees: 30 deg
• Pulse Width: 1.6 us, 4 us
• Maximum Rise Time: 40 ns, 25 ns
• Maximum Fall Time: 40 ns, 25 ns
• Led Supply Voltage: - 0.5 V to 7 V
• Maximum Forward Current: 165 mA
• Operating Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: - 20 C
• Dimensions: 12.2 mm x 4.9 mm x 4 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Marking Information
The HSDL-3602-007/-037 is marked ‘3602YYWW’ on
the shield where ‘YY’ indicates the unit’s manufacturing
year, and ‘WW’ refers to the work week in which the unit
is tested.
Absolute Maximum Ratings
Parameter
Storage Temperature
Operating Temperature
DC LED Current
Peak LED Current
LED Anode Voltage
Supply Voltage
Transmitter Data Input Current
Receiver Data Output Voltage
Note:
7. For implementations where case to ambient thermal resistance ≤ 50˚C/W.
Caution: The BiCMOS inherent to the design of this component increases the component’s susceptibility to damage
from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of
this component to prevent damage and/or degradation, which may be induced by ESD.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.3
1.5
LEDA VOLTAGE (V)
HSDL-3602 Graph 1
LEDA vs LEDA
1.7
1.9
[7]
2.1
Symbol
T
T
I
I
V
V
I
V
LED
LED
TXD
A
S
LEDA
CC
O
(DC)
(PK)
(DC)
2.3
Minimum
–40
–20
–0.5
0
–12
–0.5
450
400
350
300
250
200
150
100
50
0
Maximum
+100
+70
165
650
750
7
7
12
V
0
CC
LIGHT OUTPUT POWER (LOP) vs ILED
+ 0.5
0.1
0.2
HSDL-3602 Graph 2
0.3
ILED (A)
Unit
˚C
˚C
mA
mA
mA
V
V
mA
V
0.4
0.5
Conditions
≤ 90 µs pulse width,
≤ 25% duty cycle
≤ 2 µs pulse width,
≤ 10% duty cycle
|I
O
(RXD)| = 20 µA
0.6
0.7