SI5475DC-T1-E3 Vishay, SI5475DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5475DC-T1-E3
• Description: MOSFET P-CH 12V 5.5A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5475DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 450mV @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 5.5 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 71324
S09-1503-Rev. C, 10-Aug-09
0.10
0.08
0.06
0.04
0.02
0.00
0
20
10
5
4
3
2
1
0
1
0.0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 5.5 A
On-Resistance vs. Drain Current
0.2
= 6 V
5
V
V
SD
5
Q
GS
I
D
g
- Source-to-Drain Voltage (V)
= 1.8 V
- Drain Current (A)
0.4
- Total Gate Charge (nC)
Gate Charge
T
J
10
= 150 °C
10
0.6
V
V
GS
GS
0.8
15
= 2.5 V
= 4.5 V
T
15
J
= 25 °C
1.0
20
20
1.2
0.10
0.08
0.06
0.04
0.02
0.00
3000
2500
2000
1500
1000
500
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
C
D
- 25
GS
rss
iss
= 5.5 A
2
= 4.5 V
1
C
V
oss
T
V
0
GS
J
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
4
Capacitance
25
2
I
D
= 5.5 A
Vishay Siliconix
50
6
3
75
Si5475DC
8
www.vishay.com
100
4
10
125
150
5
12
3