SI5475DC-T1-E3 Vishay, SI5475DC-T1-E3 Datasheet - Page 4

no-image

SI5475DC-T1-E3

Manufacturer Part Number
SI5475DC-T1-E3
Description
MOSFET P-CH 12V 5.5A 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5475DC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
450mV @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Power - Max
1.3W
Mounting Type
*
Package / Case
*
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.031 Ohms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 5.5 A
Power Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5475DC-T1-E3
Manufacturer:
AD
Quantity:
114
Part Number:
SI5475DC-T1-E3
Manufacturer:
VISHAY
Quantity:
2 984
Part Number:
SI5475DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si5475DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71324.
www.vishay.com
4
- 0.05
- 0.10
- 0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
Threshold Voltage
T
J
- Temperature (°C)
25
10
- 3
50
10
I
D
Single Pulse
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 1 mA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
- 2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
150
10
- 2
10
- 1
50
40
30
20
10
10
1
0
10
- 1
- 3
10
- 2
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
- 1
Time (s)
- T
t
1
1
A
S09-1503-Rev. C, 10-Aug-09
= P
t
2
Document Number: 71324
1
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 80 °C/W
100
600
10
600

Related parts for SI5475DC-T1-E3