SI5475DC Vishay Siliconix, SI5475DC Datasheet
SI5475DC
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SI5475DC Summary of contents
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... V = --2 0.054 @ V = --1 1206-8 ChipFETt Bottom View Ordering Information: Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Source Current a a Maximum Power Dissipation ...
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... Si5475DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... Source-to-Drain Voltage (V) SD Document Number: 71324 S-21251—Rev. B, 05-Aug-02 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si5475DC Vishay Siliconix Capacitance C iss C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si5475DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.30 0.25 0. 0.15 0.10 0.05 --0.00 --0.05 --0.10 --0.15 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...