SUD50N02-06-E3 Vishay, SUD50N02-06-E3 Datasheet
SUD50N02-06-E3
Specifications of SUD50N02-06-E3
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SUD50N02-06-E3 Summary of contents
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... Document Number: 71136 S-31724—Rev. C, 18-Aug- ( N-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 100_C 25_C 25_C A T Symbol sec. R Steady State R SUD50N02-06 Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% R Tested g Limit " 100 100 8 175 ...
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... SUD50N02-06 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... S-31724—Rev. C, 18-Aug-03 120 3.5 V 100 2 1 0.0 0.010 25_C 0.008 125_C 0.006 0.004 0.002 0.000 80 100 SUD50N02-06 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...
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... SUD50N02-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 4 1.6 1.2 0.8 0.4 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 100 T - Case Temperature (_C) A Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...