SUD50N02-09P-E3 Vishay, SUD50N02-09P-E3 Datasheet

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SUD50N02-09P-E3

Manufacturer Part Number
SUD50N02-09P-E3
Description
MOSFET N-CH D-S 20V DPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD50N02-09P-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
1300pF @ 10V
Power - Max
6.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0095 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
9.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SUD50N02-09P-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N02-09P-E3
Manufacturer:
VISHAY
Quantity:
2 000
Notes
a.
b.
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Ordering Information: SUD50N02-09P
V
Surface Mounted on FR4 Board, t v 10 sec.
Limited by package
DS
20
20
(V)
G
Top View
TO-252
D
S
SUD50N02-09P—E3 (Lead Free)
a
a
0.0095 @ V
0.017 @ V
a
a
Drain Connected to Tab
r
DS(on)
N-Channel 20-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
(W)
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
20
15
(A)
Steady State
T
L = 0 1 mH
L = 0.1 mH
T
t v 10 sec
T
T
C
A
A
C
a
= 100_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R
APPLICATIONS
D High-Side Synchronous Buck DC/DC
stg
Conversion
− Desktop
− Server
g
Typical
Tested
3.1
19
40
−55 to 175
Limit
SUD50N02-09P
"20
39.5
6.5
100
4.3
20
20
14
29
42
Vishay Siliconix
a
Maximum
3.8
23
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
1

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SUD50N02-09P-E3 Summary of contents

Page 1

... 0.017 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N02-09P SUD50N02-09P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SUD50N02-09P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T − Junction Temperature (_C) J Document Number: 72034 S-41168—Rev. C, 14-Jun-04 0.030 0.025 25_C 0.020 125_C 0.015 0.010 0.005 0.000 100 100 125 150 175 SUD50N02-09P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N02-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com 4 1000 100 10 1 0.1 0.01 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Ambient − ...

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