SUD50N02-09P-E3 Vishay, SUD50N02-09P-E3 Datasheet - Page 3

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SUD50N02-09P-E3

Manufacturer Part Number
SUD50N02-09P-E3
Description
MOSFET N-CH D-S 20V DPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD50N02-09P-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
1300pF @ 10V
Power - Max
6.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0095 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
9.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SUD50N02-09P-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N02-09P-E3
Manufacturer:
VISHAY
Quantity:
2 000
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
T
C
= 30 A
C
rss
= 10 V
= −55_C
10
4
V
T
0
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
D
25
− Drain Current (A)
Capacitance
20
8
50
C
C
oss
iss
75
30
12
100
125
40
16
125_C
25_C
150
175
50
20
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
= 10 V
J
V
0.3
V
20
4
= 150_C
GS
SD
Q
= 4.5 V
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
40
0.6
8
SUD50N02-09P
Vishay Siliconix
60
12
0.9
T
V
J
GS
= 25_C
= 10 V
www.vishay.com
80
16
1.2
100
20
1.5
3

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