SUD50N02-09P-E3 Vishay, SUD50N02-09P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N02-09P-E3
• Description: MOSFET N-CH D-S 20V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N02-09P-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 9.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50N02-09P-E3TR

Document Number: 72034
S-41168—Rev. C, 14-Jun-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
T
C
= 30 A
C
rss
= 10 V
= −55_C
10
4
V
T
0
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
D
25
− Drain Current (A)
Capacitance
20
8
50
C
C
oss
iss
75
30
12
100
125
40
16
125_C
25_C
150
175
50
20
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
= 10 V
J
V
0.3
V
20
4
= 150_C
GS
SD
Q
= 4.5 V
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
40
0.6
8
SUD50N02-09P
Vishay Siliconix
60
12
0.9
T
V
J
GS
= 25_C
= 10 V
www.vishay.com
80
16
1.2
100
20
1.5
3