sud50n02-11p Vishay, sud50n02-11p Datasheet
sud50n02-11p
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sud50n02-11p Summary of contents
Page 1
... Symbol T = 25_C 100_C 25_C 25_C C T Symbol sec R Steady State R SUD50N02-11P Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server Limit " ...
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... SUD50N02-11P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... New Product 0.040 T = -55_C 0.035 C 0.030 25_C 0.025 125_C 0.020 0.015 0.010 0.005 0.000 100 100 125 150 175 SUD50N02-11P Vishay Siliconix On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...
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... SUD50N02-11P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T - Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. www.vishay.com 4 New Product 1000 100 10 1 0.1 0.01 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Ambient ...