sud50n02-11p Vishay, sud50n02-11p Datasheet - Page 2

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sud50n02-11p

Manufacturer Part Number
sud50n02-11p
Description
N-channel 20-v D-s 175 ?mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N02-11P
Manufacturer:
VISHAY
Quantity:
12 500
SUD50N02-11P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
100
c
c
80
60
40
20
0
a
0
Parameter
c
c
c
c
c
b
b
V
2
V
DS
GS
b
Output Characteristics
= 10 thru 6 V
- Drain-to-Source Voltage (V)
b
J
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
R
g
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
G
r
f
g
8
5 V
4 V
3 V
C
New Product
10
V
I
V
V
V
D
V
= 25_C)
GS
DS
DS
DS
GS
^ 50 A, V
= 0 V, V
I
= 16 V, V
= 10 V, V
= 10 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
F
GS
DS
= 0 V, V
= 50 A, V
= V
= 10 V, R
= 10 V, R
= 0 V, I
= 16 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
D
GS
GS
GS
GS
= 10 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
= 4.5 V, I
D
D
GS
GS
D
= 250 mA
D
L
L
GS
D
= 250 mA
= "20 V
= 20 A
= 0.2 W
= 0.2 W
= 20 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
G
= 125_C
= 125_C
D
D
100
= 2.5 W
80
60
40
20
= 50 A
= 50 A
0
0
1
V
GS
Transfer Characteristics
2
- Gate-to-Source Voltage (V)
Min
0.8
20
50
15
3
0.0086
Typ
T
0.016
1190
435
190
C
3.5
9.2
1.2
11
10
30
25
4
3
9
25_C
= -55_C
S-22453—Rev. A, 20-Jan-03
4
a
Document Number: 72094
0.0165
5
"100
Max
0.011
0.020
100
3.0
1.5
50
14
20
15
45
15
50
1
125_C
6
Unit
nC
nC
nA
m
mA
pF
ns
ns
W
W
W
V
A
S
A
V
7

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