SUD50N02-09P-E3 Vishay, SUD50N02-09P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N02-09P-E3
• Description: MOSFET N-CH D-S 20V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N02-09P-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 9.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50N02-09P-E3TR

SUD50N02-09P
Vishay Siliconix
www.vishay.com
4
THERMAL RATINGS
25
20
15
10
5
0
0.01
0
0.1
2
1
10
−4
25
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Maximum Drain Current vs.
T
A
Ambiemt Temperature
50
− Ambient Temperature (_C)
10
75
−3
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
−2
150
175
Square Wave Pulse Duration (sec)
10
−1
1000
0.01
100
1
0.1
10
1
0.1
by r
Limited
DS(on)
V
DS
10
Single Pulse
Safe Operating Area
T
− Drain-to-Source Voltage (V)
A
1
= 25_C
100
S-41168—Rev. C, 14-Jun-04
Document Number: 72034
10
10, 100 ms
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
1000
100