SUD50N02-09P-E3 Vishay, SUD50N02-09P-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50N02-09P-E3
• Description: MOSFET N-CH D-S 20V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N02-09P-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 9.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50N02-09P-E3TR

SUD50N02-09P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
100
c
c
80
60
40
20
0
a
0
Parameter
c
c
c
c
c
b
V
b
GS
V
2
DS
b
= 10 thru 6 V
Output Characteristics
− Drain-to-Source Voltage (V)
b
J
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
R
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
5 V
4 V
3 V
8
C
10
V
I
V
V
V
V
D
= 25_C)
GS
DS
DS
DS
GS
^ 50 A, V
= 0 V, V
I
= 20 V, V
= 10 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
10 V, V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
F
GS
DS
= 0 V, V
= 50 A, V
= V
= 10 V, R
= 10 V, R
= 0 V, I
= 20 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
D
GS
GS
GS
GS
= 10 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
GS
D
4.5 V, I
= 250 mA
D
L
L
GS
D
= 250 mA
= "20 V
= 20 A
= 0.2 W
= 0.2 W
= 20 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
= 125_C
g
g
= 125_C
D
D
100
= 2.5 W
80
60
40
20
= 50 A
0
50 A
0
1
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
0.8
1.6
20
50
15
2
3
0.0135
Typ
0.008
1300
10.5
470
275
4.2
4.0
4.0
1.2
10
25
12
35
8
T
S-41168—Rev. C, 14-Jun-04
C
25_C
a
Document Number: 72034
= −55_C
4
0.0095
"100
Max
0.014
0.017
100
3.0
1.5
50
16
12
15
40
20
70
1
6
125_C
5
Unit
nC
nC
nA
mA
mA
pF
p
ns
ns
ns
W
W
W
V
V
A
S
A
V
6