GUO40-12NO1 IXYS, GUO40-12NO1 Datasheet - Page 2

• Manufacturer Part Number: GUO40-12NO1
• Description: 3-PHASE BRIDGE RECT 1200V 40A
• Manufacturer: IXYS

Specifications of GUO40-12NO1

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 40A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 5-SIP
• Phase Type: Three Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.2kV
• Peak Non-repetitive Surge Current (max): 390A
• Avg. Forward Curr (max): 6A
• Rev Curr: 50uA
• Forward Voltage: 1.1V
• Operating Temp Range: -40C to 150C
• Mounting: Through Hole
• Operating Temperature Classification: Automotive
• Vrrm, (v): 1200
• Vrsm, (v): 1300
• Idavm, (a): 40
• @ Th, (°c): -
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj = 45°c, (a): 370
• Vt0, (v): 0.86
• Rt, (mohms): 12.9
• Tvjm, (°c): 175
• Rthjc, Per Chip, (k/w): 4.3
• Rthjh, Per Chip, (k/w): -
• Package Style: GUFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
P
Z thJC
I
F
tot
K/W
120
110
100
50
40
30
20
10
W
90
80
70
60
50
40
30
20
10
A
0.001
0
0
5
4
3
2
1
0
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current
Fig. 6 Transient thermal impedance junction to case
5 10 15 20 25 30 35 40
T
0.5
VJ
voltage drop per diode
and ambient temperature, sine 180°
=125°C
1.0
I
d(AV)M
T
0.01
VJ
V
= 25°C
F
1.5
V
A
2.0
0
I
FSM
0.1
30
140
120
100
A
80
60
40
20
0.001
0
Fig. 2 Surge overload current
60
f = 50 Hz
V
R
= 0.8V
T
VJ
= 125°C
90
0.01
T
RRM
A
1
R
T
thHA
120
VJ
= 25°C
t
t
0.1
[K/W]
0.4
10
150
1
2
5
s
C
180
10
1
s
I
2
I
t
d(AV)M
1000
A
100
2
50
40
30
20
10
A
s
0
1
0
Fig. 3 I
Fig. 5 Max. forward current
V
R
T
= 0 V
VJ
Constants for Z
= 45°C
40
1
2
3
4
vs. case temperature
i
2
t versus time per diode
80
R
thi
0.302
1.252
1.582
1.164
T
T
VJ
(K/W)
H
t
= 125°C
120
GUO 40
thJC
ms
calculation:
160
10
C
0.002
0.032
0.227
0.82
t
i
(s)
20090908
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