VUO34-12NO1 IXYS, VUO34-12NO1 Datasheet - Page 3

• Manufacturer Part Number: VUO34-12NO1
• Description: RECT BRIDGE 3PH 36A 1200V V1-A
• Manufacturer: IXYS

Specifications of VUO34-12NO1

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 36A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: V1-A
• Vrrm, (v): 1200
• Vrsm, (v): 1300
• Idavm, (a): 36
• @ Th, (°c): -
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 300
• Vt0, (v): 0.80
• Rt, (mohms): 15.0
• Tvjm, (°c): 130
• Rthjc, Per Chip, (k/w): -
• Rthjh, Per Chip, (k/w): 2.50
• Package Style: V1-A-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Zth
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
P
I
JK
F
tot
K/W
150
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
W
90
60
30
A
0
0
0.0
10
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode
-3
T
T
0.5
VJ
VJ
10
voltage drop per diode
= 25°C
= 130°C
1.0
20
10
-2
1.5
30
ma x.
typ.
2.0
40
V
F
10
I
V
dAVM
A
-1
2.5
0
I
FSM
25
250
200
150
100
Fig. 2 Surge overload current per diode
50
A
0
10
10
-3
0
50
I
FSM
: Crest value. t: duration
75
Zth
10
JK
-2
10
10 0
1
R
0.5
1
1.5
2
3
4
6
thKA
10
s
12 5
K/W
-1
t
t
50 Hz
0.8 x V
T
°C
A
s
150
10
RRM
2
10
0
I
dAVM
I
1000
2
d
Constants for Z
t
100
A
10
50
40
30
20
10
2
A
s
0
1
2
3
4
i
1
0
Fig. 5 Maximum forward current
Fig. 3 I
25
T
R
VJ
at case temperature
(1-10 ms) per diode
thi
0.005
0.3
1.245
0.95
2
= 45°C
t versus time
50
(K/W)
thJC
calculation:
T
75
VJ
VUO 34
= 130°C
10 0
0.008
0.05
0.1
0.5
t
t
i
(s)
12 5
20100503a
ms
T
°C
3 - 3
K
150
1
0