VUO60-18NO3 IXYS, VUO60-18NO3 Datasheet - Page 2
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VUO60-18NO3
Manufacturer Part Number
VUO60-18NO3
Description
RECT BRIDGE 3PH 72A 1800V FO-F-B
Manufacturer
IXYS
Datasheet
1.VUO60-12NO3.pdf
(2 pages)
Specifications of VUO60-18NO3
Voltage - Peak Reverse (max)
1800V
Current - Dc Forward (if)
72A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
PCB
Package / Case
FO-F-B
Phase Type
Three Phase
Number Of Elements
1
Peak Rep Rev Volt
1.8kV
Peak Non-repetitive Surge Current (max)
650A
Avg. Forward Curr (max)
72A
Rev Curr
300uA
Forward Voltage
1.9V
Package Type
ISOPLUS i5-Pac
Operating Temp Range
-40C to 125C
Pin Count
7
Mounting
Screw
Operating Temperature Classification
Automotive
Vrrm, (v)
1800
Vrsm, (v)
1900
Idavm, (a)
72
@ Th, (°c)
-
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
600
Vt0, (v)
0.80
Rt, (mohms)
6.5
Tvjm, (°c)
125
Rthjc, Per Chip, (k/w)
1.20
Rthjh, Per Chip, (k/w)
1.60
Package Style
FO-F-B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VUO60-18NO3
Quantity:
83
© 2008 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
I
P
Z
F
tot
thJH
K/W
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
W
50
A
0.001
0
0
0.0
0
Fig. 4 Forward current versus
Fig. 9 Transient thermal impedance junction to heatsink
Fig. 7 Power dissipation vs. direct output current and ambient temperature
T
T
10
VJ
VJ
=125°C
= 25°C
voltage drop per diode
20
0.5
0.01
30
40
1.0
V
F
50
I
V
d(AV)M
0.1
60
1.5
70
I
A
FSM
600
500
400
300
200
100
0
A
0.001
0
Fig. 5 Surge overload current
50Hz, 80% V
20
1
T
VJ
40
= 125°C
0.01
60
RRM
T
80
10
VJ
T
= 45°C
amb
0.1
100 120
t
t
R
0.2 K/W
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
5.0 K/W
s
s
thHA
:
°C
1
100
I
d(AV)M
Constants for Z
I
2
t
1
2
3
4
A
10
10
10
i
80
70
60
50
40
30
20
10
2
A
0
s
4
3
2
1
0
Fig. 8 Max. forward current vs.
Fig. 6 I
V
R
= 0 V
T
20
VJ
R
0.883
0.098
0.202
0.417
= 45°C
case temperature
thi
2
40
t versus time per diode
2
(K/W)
thJH
60
calculation:
3
T
VUO 60
80 100 120
VJ
4 5 6 7 8 9
= 125°C
T
t
0.102
0.103
0.492
0.62
i
C
(s)
t
20080527a
ms
2 - 2
°C
10