VUO120-12NO1 IXYS, VUO120-12NO1 Datasheet - Page 3
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VUO120-12NO1
Manufacturer Part Number
VUO120-12NO1
Description
RECT BRIDGE 3PH 1200V V2-PACK
Manufacturer
IXYS
Datasheet
1.VUO120-12NO1.pdf
(4 pages)
Specifications of VUO120-12NO1
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
121A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
PCB
Package / Case
V2-PAK
Vrrm, (v)
1200
Vrsm, (v)
1300
Idavm, (a)
121
@ Th, (°c)
-
@ Tc, (°c)
75
Ifsm, 10 Ms, Tvj = 45°c, (a)
650
Vt0, (v)
0.80
Rt, (mohms)
6.1
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
1.00
Rthjh, Per Chip, (k/w)
1.30
Package Style
V2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VUO120-12NO1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Fig. 1 Forward current versus voltage
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
Fig. 6 Transient thermal impedance junction to case
© 2007 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
I
P
F
150
120
150
100
tot
K/W
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
60
30
50
W
A
0
0
0.0
0.01
drop per diode
0
T
T
20
VJ
VJ
0.5
= 25°C
= 150°C
40
1.0
60
V
F
80
1.5
0.1
I
V
100
d(AV)M
2.0
120
Fig. 2 Surge overload current
I
FSM
A
700
600
500
400
300
200
100
0
A
0.001
0
20
50 Hz, 80% V
40
T
VJ
1
0.01
60
= 150°C
RRM
80 100 120 140
T
T
VJ
amb
0.1
= 45°C
t
R
0.7 KW
1
1.4 KW
2
3
5
t
thKA
s
s
KW
KW
KW
KW
:
VUO 120
°C
1
10
I
Fig. 3 I
Fig. 5 Max. forward current versus
d(AV)M
Constants for Z
I
2
t
1
2
3
4
140
120
100
10
A
10
i
80
60
40
20
2
A
0
s
4
3
1
0
case temperature
V
2
t versus time per diode
R
20 40 60 80 100 120 140
= 0 V
R
0.003521
0.1479
0.5599
0.2887
thi
2
(K/W)
thJC
T
VJ
calculation:
= 45°C
3
VUO 120
4 5 6 7 8 9
T
T
t
0.01
0.05
0.14
0.5
VJ
i
C
(s)
= 150°C
t
20071019a
ms
3 - 4
°C
10