VUB116-16NO1 IXYS, VUB116-16NO1 Datasheet - Page 6

• Manufacturer Part Number: VUB116-16NO1
• Description: RECT BRIDGE 3PH 1600V 116A E2
• Manufacturer: IXYS

Specifications of VUB116-16NO1

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 116A
• Diode Type: Three Phase - IGBT with Diode
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: E2
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature Classification: Automotive
• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 116
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 67
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

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Z
I
F
tot
thJC
0.01
200
150
100
600
550
500
450
400
350
300
250
200
150
100
K/W
0.1
W
A
50
50
0
0
0
1
0.0
0 .
0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation vs. direct output current and ambient temperature, sin 180°
Fig. 6 Transient thermal impedance junction to case
1
20
0.5
voltage drop per diode
T
T
40
VJ
VJ
= 125°C
= 25°C
1.0
60
80
1.5
V
F
0
100 120 140
0 .
1
2.0
I
d(AV)M
V
A
I
FSM
Input Rectifier Bridge
600
500
400
300
200
100
A
0
0.001
0
Fig. 2 Surge overload current
20
50Hz, 80% V
40
0
1 .
0.01
60
RRM
80 100 120 140
T
VJ
T
= 45°C
VJ
T
amb
= 150°C
0.1
t
R
t
0.1 K/W
0.3 K/W
0.6 K/W
1.0 K/W
1.5 K/W
2.5 K/W
thA
s
s
:
C
1
1
I
d(AV)
I
2
t
160
140
120
100
A
10
10
A
80
60
40
20
2
0
s
4
3
1
0
Fig. 3 I
Fig. 5 Max. forward current vs.
20 40 60 80 100 120 140
T
T
VJ
VJ
= 150°C
= 45°C
case temperature
2
t versus time per diode
2
VUB 145
3
4 5 6 7 8 9 0
T
C
t
20080513b
6 - 7
ms
C
1