BST52 /T3 NXP Semiconductors, BST52 /T3 Datasheet

Darlington Transistors TRANS DARLINGTON TAPE-13

BST52 /T3

Manufacturer Part Number
BST52 /T3
Description
Darlington Transistors TRANS DARLINGTON TAPE-13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BST52 /T3

Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
90 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.05 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BST52,135
Product data sheet
Supersedes data of 2001 Feb 20
dbook, halfpage
DATA SHEET
BST50; BST51; BST52
NPN Darlington transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 09

Related parts for BST52 /T3

BST52 /T3 Summary of contents

Page 1

... DATA SHEET dbook, halfpage BST50; BST51; BST52 NPN Darlington transistors Product data sheet Supersedes data of 2001 Feb 20 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 09 ...

Page 2

... NXP Semiconductors NPN Darlington transistors FEATURES • High current (max. 0.5 A) • Low voltage (max • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. ...

Page 3

... NXP Semiconductors NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BST50 BST51 BST52 V collector-emitter voltage CES BST50 BST51 BST52 V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC) ...

Page 4

... NXP Semiconductors NPN Darlington transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-emitter cut-off current CES BST50 BST51 BST52 I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat f transition frequency T Switching times (between 10% and 90% levels); (see Fig.3) ...

Page 5

... NXP Semiconductors NPN Darlington transistors 5000 handbook, full pagewidth h FE 4000 3000 2000 1000 0 − oscilloscope = 200 μ μ Ω kΩ kΩ −1 10 Ω. Oscilloscope: input impedance Z i 2004 Dec Fig.2 DC current gain; typical values (probe) 450 Ω ≤ Ω. ...

Page 6

... NXP Semiconductors NPN Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4.6 2 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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