BCV29 T/R NXP Semiconductors, BCV29 T/R Datasheet - Page 4
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BCV29 T/R
Manufacturer Part Number
BCV29 T/R
Description
Darlington Transistors TRANS DARLINGTON TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BCV49115.pdf
(8 pages)
Specifications of BCV29 T/R
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
4000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCV29,115
NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 06
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
NPN Darlington transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV29
BCV49
BCV29
BCV49
PARAMETER
I
I
I
V
V
I
I
I
E
E
C
C
C
C
C
CE
CE
I
I
I
I
I
I
I
I
= 0 A; V
= 0 A; V
= 0 A; V
= 100 mA; I
= 100 mA; I
= 10 mA; V
= 30 mA; V
C
C
C
C
C
C
C
C
= 5 V; see Fig.2
= 5 V; see Fig.2
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
4
CB
CB
EB
CONDITIONS
= 30 V
= 60 V
= 10 V
CE
CE
B
B
= 0.1 mA
= 0.1 mA
= 5 V
= 5 V; f = 100 MHz −
−
−
−
4 000
10 000 −
20 000 −
4 000
2 000
4 000
10 000 −
2 000
−
−
−
MIN.
BCV29; BCV49
−
−
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
100
100
100
−
−
−
−
−
−
−
−
1
1.5
1.4
−
MAX. UNIT
nA
nA
nA
V
V
V
MHz